2008 |
Understanding improved TANOS retention by material analysis of the SixNy trapping layer | Aude Rothschild, G. Van den bosch, L. Breuil, A. Cacciato, H. Dekkers, E. Sleeckx, T. Conard, B. Brijs, J. A. Kittl | IMEC | 214th Meeting of Electrochemical Society | 12/10/2008 | Honolulu, HI, USA |
Nitride engineering for improved erase performance and retention of TANOS NAND Flash memory | Geert Van den bosch, A. Furnémont, L. Breuil, M. B. Zahid, R. Degraeve, A. Cacciato, A. Rothschild, C. Olsen, U. Ganguly, J. Van houdt | IMEC | 23rd IEEE Nonvolatile Semiconductor Memory Workshop (NVSMW) | 18/05/2008 | Opio, France |
Improvement of TANOS NAND Flash performance by the optimization of a sealing layer | Laurent Breuil, A. Furnémont, A. Rothschild, G. Van den bosch, A. Cacciato, J. Van Houdt | IMEC | 23rd IEEE Nonvolatile Semiconductor Memory Workshop (NVSMW) | 18/05/2008 | Opio, France |
Materials selection, analysis and optimization for charge trap Flash memory stack | Geert Van den bosch | IMEC | IMST2008 - EU Memory Technology Projects & Tutorials | 26/11/2008 | Leuven, Belgium |
Tutorial on Flash Memories | Jan Van Houdt | IMEC | IMST2008 - EU Memory Technology Projects & Tutorials | 26/11/2008 | Leuven, Belgium |
Integration of Charge Trap Cell for NAND application: reasons, basic contraints and fundamental architectural choices | Paolo Tessariol | NUMONYX | IMST2008 - EU Memory Technology Projects & Tutorials | 26/11/2008 | Leuven, Belgium |
Challenges of TANOS NAND string process integration | Volkhard Beyer | CNT/Qimonda | IMST2008 - EU Memory Technology Projects & Tutorials | 26/11/2008 | Leuven, Belgium |
2009 |
Investigation of window instability in program/erase cycling of TANOS NAND Flash memory | Geert Van den bosch, L. Breuil, A. Cacciato, A. Rothschild, M. Jurczak, J. Van Houdt | IMEC | International Memory Workshop | 10/05/2009 | Monterey, USA |
TaN metal gate damage during high-k (Al2O3) high-temperature etch | J. Paul, V. Beyer, P. Michalowski, M.F. Beug, L. Bach, M. Ackermann, S. Wege, A. Tilke, N. Chan, T. Mikolajick, U. Bewersdorff-Sarlette, R. Knöfler, M. Czernohorsky, C. Ludwig | QD/CNT | Microelectronic Engineering | 2009 | |
O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory | A. Rothschild, L. Breuil, G. Van den bosch, O. Richard, T. Conard, A. Franquet, A. Cacciato, I. Debusschere, M. Jurczak, J. Van Houdt, J. A. Kittl, U. Ganguly, L. Date, P. Boelen, R. Schreutelkamp | IMEC | ESSDERC – ESSCIRC | 15/09/2009 | Athens, Greece |
Experimental Evaluation of Trapping Efficiency in Silicon Nitride Based Charge Trapping Memories | A. Suhane, A. Arreghini, G. Van den bosch, L. Breuil, A. Cacciato, A. Rothschild, M. Jurczak, J. Van Houdt and K. De Meyer | IMEC | ESSDERC – ESSCIRC | 15/09/2009 | Athens, Greece |
The Role of the Substrate on the Atomic Layer Deposition of Alumina on Silicon Nitride, and its Oxides | Maria-Elena Grillo | TYNDALL | Workshop on Computer simulation of oxides: Dopants, defects and surfaces | 09/09/2009 | Dublin, Ireland |
Stress Influence on TANOS Cell Performance | Thomas Melde | Qimonda, CNT | IEEE International Memory Workshop (IMW), | 10/05/2009 | Monterey, USA |
Improvement of 48 nm TANOS NAND Cell Performance by Introduction of a Removable Encapsulation Liner | Florian Beug | Qimonda, CNT | ECS Spring Meeting | 24/05/2009 | San Francisco, USA |
FIRST PRINCIPLES STUDY OF THE ATOMIC LAYER DEPOSITION OF ALUMINA ON SILICON NITRIDE, SILICON OXYNITRIDE AND SILICON DIOXIDE | Simon Eliott, Maria Elena Grillo | Tyndall | Atomic Layer Deposition conference | 15/06/2009 | Uppsala, Sweden |
Formation of an interface layer between Al1-xSixOy thin films and the substrate during the rapid thermal annealing | Paweł Piotr Michałowski, Volkhard Beyer, Malte Czernohorsky, Peter Kücher, Steffen Teichert, Gert Jaschke, Wolfhard Möller | CNT | ICFSI conference 2009 | 05/07/2009 | Weimar, Germany |
Analysis of Trap Mechanisms responsible for Random Telegraph Noise and Erratic Programming on sub-50nm Floating Gate Flash Memories | K. Seidel, R. Hoffmann, D. A. Löhr, T. Melde, M. Czernohorsky, J. Paul, M. F. Beug, and V. Beyer | CNT, Namlab | 10th Annual Non-Volatile Memory Technology Symposium (NVMTS 2009) | 25/10/2009 | Portland, OR USA |
Electrical Analysis of Unbalanced Flash Memory Array Construction Effects and their impact on Performance and Reliability | K. Seidel, T. Muller, T. Brandt, R. Hoffmann, D.A. Lohr, T. Melde, M. Czernohorsky, J. Paul, V. Beyer | CNT, Namlab | 10th Annual Non-Volatile Memory Technology Symposium (NVMTS 2009) | 25/10/2009 | Portland, OR USA |
Improvement of 48 nm TANOS NAND Cell Performance by Introduction of a Removable Encapsulation Liner | M. F. Beug, T. Melde, J. Paul, U. Bewersdorff-Sarlette, M. Czernohorsky, V. Beyer, R. Hoffmann, K. Seidel, D. A. Löhr, L. Bach, R. Knoefler, A. T. Tilke | QD/CNT | International Memory Workshop | 10/05/2009 | Monterey, CA , USA |
Characterisation of retention properties of charge-trapping memory cells at low temperatures | E Yurchuk, J Bollmann and T Mikolajick | TUBAF | IOP Conference Series: Materials Science and Engineering | | Nancy, France |
Characterization of the diffusion process in Al2O3 thin films based on ToF-SIMS measurements | P. P. Michalowski, M. Czernohorsky, V.d Beyer, G. Jaschke and S. Teichert | CNT, Namlab | DPG Frühjahrstagung 2009 | mars-09 | Dresden (Germany) |
Investigation of TaN and TiN metal gates during high-k (Al2O3) dry etch at elevated Temperatures | J. Paul, V. Beyer, K. Biedermann, M. Mildner, E. Schuetze, T. Melde, M. Czernohorsky, S. Wege, M.F. Beug, R. Knoefler, T. Mikolajick | CNT, Namlab | 35th International Conference on Micro-and Nano-Engineering, | 28/09/2009 | Ghent (Belgium) |
Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators | M. I. Vexler, A. Kuligk, B. Meinerzhagen | TUBS | Solid-State Electronics | 2009 | |
New materials in memory development sub 50nm: Trends in Flash and DRAM | K. H. Kuesters, M. F. Beug, U. Schroeder, N. Nagel, U. Bewersdorff, G. Dallmann, S. Jakschik, R. Knoefler, S. Kudelka, C. Ludwig, D. Manger, W. Mueller, A. Tilke | QD | Advance Engineering materials | 2009 | Wiley-VCH Verlag GmbH & Co. KGaA |
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride Based NVM Cells | Elisa Vianello, Francesco Driussi, Antonio Arreghini, Pierpaolo Palestri, David Esseni, | IUNET | Transaction on Electron Devices | 2009 | |
Select Device Disturb Phenomena in TANOS NAND Flash Memories | Thomas Melde, Marc Florian Beug, Lars Bach, Armin Thomas Tilke, Roman Knoefler, Ulrike Bewersdorff-Sarlette, Volkhard Beyer, Malte Czernohorsky, Jan Paul, Thomas Mikolajick | QD/CNT, TUBAF | IEEE Electron Device Letters | 2009 | |
Franz Dispersion Relation for Tunneling Simulations in polycrystaline-Silicon/SiO_2/Si_3N_4/SiO_2/Si and TaN/Al_2O_3/Si_3N_4/SiO_2/Si structures | M.I. Vexler, A. Kuligk, B. Meinerzhagen | TUBS | Japanese Journal of Applied Physics | 2009 | |
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime | Christian Monzio Compagnoni, Aurelio Mauri, Salvatore Amoroso, Alessandro Maconi, and Alessandro S. Spinelli | Numonyx/IUNET | Transaction Electron Device | 2009 | |
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells | E. Vianello, F. Driussi, A. Arreghini, P. Palestri, D. Esseni, L. Selmi, A. Akil, M. J. van Duuren, and D. S. Golubovic | IUNET | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2009 | |
Franz Dispersion Relation for Tunneling Simulations in Polycrystaline-Silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si Structures | M.I. Vexler, A. Kuligk, and B. Meinerzhagen | TUBS | Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.) | 2009 | |
TaN Metal Gate Damage During High-k (Al2O3) High-Temperature Etch | J. Paul, V. Beyer, P. Michalowski, M.F. Beug, L. Bach, M. Ackermann, S. Wege, A. Tilke, N. Chan, T. Mikolajick, U. Bewersdorff-Sarlette, R. Knöfler, M. Czernohorsky, and C. Ludwig | QD/CNT | Microelectronic Engineering (Microelectron. Eng.) | 2009 | |
2010 |
Improved high temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices | J. Paul, V. Beyer, M. Czernohorsky, M.F. Beug, K. Biedermann, M. Mildner, P. Michalowski, E. Schütze, T. Melde, S. Wege, R. Knöfler, T. Mikolajick | CNT | Microelectronic Engineering | 2010 | |
Validation of Retention Modeling as a Trap Profiling Technique for SiN based Charge Trapping Memories | A. Suhane , A. Arreghini, R. Degraeve, G. Van den bosch, L. Breuil, M.B. Zahid, M. Jurczak,K. De Meyer and J. Van Houdt | IMEC | IEEE Electron Device Letters | 2010 | |
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories | E.Vianello, E.Nowak, L.Perniola, F.Driussi, P.Blaise, G.Molas, B.De Salvo, and L.Selmi | IUNET-Udine | International Memory Workshop (IMW) | May 2010 | Seoul, Korea |
Stack engineering of HfO2 –based charge trapping non volatile memory | U. Russo, S. Spiga, G. Congedo, A. Lamperti, O. Salicio, M. Fanciulli | MDM | MRS Spring 2010 Meeting | April 5-9, 2010 | San Francisco |
The Influence of Bottom Oxide Thickness on the Extraction of the Trap Energy Distribution in SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) Structures | K. Bernert, C. Oestreich, J. Bollmann, and T. Mikolajick | TUBAF | Applied Physics A (Appl. Phys. A) | 2010 | |
Comprehensive Investigation of Statistical Effects in Nitride Memories – Part I: Physics-Based Modeling | A. Mauri, C. M. Compagnoni, S. M. Amoroso, A. Maconi, A. Ghetti, A. S. Spinelli, and A. L. Lacaita | NMX, IUNET | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2010 | |
Comprehensive Investigation of Statistical Effects in Nitride Memories – Part II: Scaling Analysis and Impact on Device Performance | C. M. Compagnoni, A. Mauri, S. M. Amoroso, A. Maconi, E. Greco, A. S. Spinelli, and A. L. Lacaita | IUNET | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2010 | |
Temperature Effects on Metal-Aluminanitride-Oxide-Silicon Memory Operations | A. Padovani, L. Larcher, D. Heh, G. Bersuker, V. Della Marca, and P. Pavan | IUNET | Applied Physics Letter (Appl. Phys. Lett.) | 2010 | |
Analysis of TANOS Memory Cells with Sealing Oxide Containing Blocking Dielectric | M. F. Beug, T. Melde, M. Czernohorsky, R. Hoffmann, J. Paul, R. Knöfler, and A. T. Tilke | QD/CNT, Namlab | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2010 | |
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVM’s – Part I: Experimental Evidences from Physical and Electrical Characterization | E. Vianello, F. Driussi, L. Perniola, G. Molas, J.-P. Colonna, and L. Selmi | IUNET Udine | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2010 | |
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVM’s – Part II: Atomistic and Electrical Modeling | E. Vianello, F. Driussi, P. Blaise, P. Palestri, D. Esseni,L. Perniola, G. Molas, and L. Selmi | IUNET Udine | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2010 | |
Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories | A. Suhane, A. Arreghini, G. Van den Bosch, L. Vandelli, A. Padovani, L. Breuil, L. Larcher, K. de Meyer, and J. van Houdt | IMEC | IEEE Electron Device Letters (IEEE Electron Dev. Lett.) | 2010 | |
2011 |
Native Defects in Hexagonal β-Si3N4 Studied Using Density Functional Theory Calculations | M.-E. Grillo, S. D. Elliott, and C. Freysoldt | Tyndall | Physical Review B (Phys. Rev. B) | 2011 | |
Charge Retention Phenomena in CT Silicon Nitride: Impact of Technology and Operating Conditions | G. Ghidini, N. Galbiati, E. Mascellino, C. Scozzari, A. Sebastiani, S. Amoroso, C. Monzio Compagnoni, A.S. Spinelli, A. Maconi, R. Piagge, A. Del Vitto, M. Alessandri, I. Baldi, E. Moltrasio, G. Albini, A. Grossi, P. Tessariol, E. Camerlenghi, and A.Mauri | NUMONYX/IUNET Milano | Journal of Vacuum Science and Technology B (J. Vac. Sci. Technol. B) | 2011 | |
Synthesis and Characterization of DyScO Films Deposited on Si and Si-rich SiN by Atomic Layer Deposition for Blocking Layer Replacement in TANOS Stack | A. Lamperti, E. Cianci, U. Russo, S. Spiga, O. Salicio, G. Congedo, and M. Fanciulli | MDM, IMM-CNR | Journal of Vacuum Science and Technology B (J. Vac. Sci. Technol. B) | 2011 | |
Evaluation of DyScOx as an Alternative Blocking Dielectric in TANOS Memories with Si3N4 or Si-rich SiN Charge Trapping Layers | G. Congedo, S. Spiga, U. Russo, A. Lamperti, O. Salicio, E. Cianci, and M. Fanciulli | MDM, IMM-CNR | Journal of Vacuum Science and Technology B (J. Vac. Sci. Technol. B) | 2011 | |
Three-Dimensional Simulation of Charge-Trap Memory Programming – Part I: Average Behavior | S. M. Amoroso, A. Maconi, A. Mauri, C. M. Compagnoni, A. S. Spinelli, and A. L. Lacaita | IUNET-POLIMI and Micron | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2011 | |
Three-Dimensional Simulation of Charge-Trap Memory Programming – Part II: Variability | A. Maconi, S. M. Amoroso, C. M. Compagnoni, A. Mauri, A. S. Spinelli, and A. L. Lacaita | IUNET-POLIMI and Micron | IEEE Transactions on Electron Devices (IEEE T. Electron. Dev.) | 2011 | |
Stack Engineering of TANOS Charge-Trap Flash Memory Cell Using High-k ZrO2 Grown by ALD as Charge Trapping Layer | G. Congedo, A. Lamperti, L. Lamagna, and S. Spiga | MDM, IMM-CNR | Microelectronic Engineering (Microelectron. Eng.) | 2011 | |
BE-TANOS: feasibility and technology limitations | G.Ghidini, N.Galbiati, C.Scozzari, A.Sebastiani, R.Piagge, A.Del Vitto, P.Comite, M.Alessandri, P.Tessariol, I.Baldi, E.Moltrasio, E.Mascellino | Numonyx | Microelectronic Engineering (Microelectron. Eng.) | 2011 | |
Comprehensive Numerical Simulation of Threshold-Voltage Transients in Nitride Memoriesa | A. Mauri, S. M. Amoroso, C. Monzio Compagnoni, A. Maconi, and A.S. Spinelli | NMX | Solid-State Electronics (Solid-State Electron.) | 2011 | |