Gossamer
Structure de mise en forme 2 colonnes
  • Friday 24 March 2017
  • Main results


    GOSSAMER successfully developed a fully integrated Flash NAND technology based on the TANOS concept, investigating a large number of architecture and material options.

    Gossamer Main Results
    Gossamer Main Results

     

    The TANOS concept was demonstrated with a 1Gbit product-like demonstrator in 45nm technology for which fully functional samples were obtained with good yield and reliability performances.

    Gossamer Main Results
    Gossamer Main Results

     

     

    The scalability of the technology was demonstrated by realizing fully functional cell arrays in 22-25nm technology and by exploring also 3-D architectures for TANOS and SONOS cells with functional devices

    Gossamer Main Results
    Gossamer Main Results



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